Mask transfer method (and related apparatus) for a bumping process

ABSTRACT

Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC includes a first dielectric structure having first inner sidewalls over an interlayer dielectric (ILD) structure. A second dielectric structure is over the first dielectric structure, where the first inner sidewalls are between second inner sidewalls of the second dielectric structure. A sidewall barrier structure is over the first dielectric structure and extends vertically along the second inner sidewalls. A lower bumping structure is between the second inner sidewalls and extends vertically along the first inner sidewalls and vertically along third inner sidewalls of the sidewall barrier structure. An upper bumping structure is over both the lower bumping structure and the sidewall barrier structure and between the second inner sidewalls, where an uppermost point of the upper bumping structure is at or below an uppermost point of the second dielectric structure.

REFERENCE TO RELATED APPLICATION

This application claims priority to U.S. Provisional Application No.62/892,646 filed on Aug. 28, 2019, the contents of which are herebyincorporated by reference in their entirety.

BACKGROUND

During the bulk manufacture of an integrated circuit (IC), a pluralityof IC dies are formed on a semiconductor wafer. After forming the ICdies, the IC dies are separated and packaged. Wafer-level packaging(WLP) is a packaging process in which the IC dies are packaged beforeseparation. Some types of WLP may include, for example, flip chippackaging, chip-scale packaging (CSP), etc.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a cross-sectional view of some embodiments of anintegrated circuit (IC) having a bumping structure.

FIG. 2 illustrate an enlarged cross-sectional view of some embodimentsof an area of FIG. 1.

FIG. 3 illustrate an enlarged cross-sectional view of some otherembodiments of the area of FIG. 1.

FIG. 4 illustrate an enlarged cross-sectional view of some otherembodiments of the area of FIG. 1.

FIG. 5 illustrate an enlarged cross-sectional view of some otherembodiments of the area of FIG. 1.

FIG. 6 illustrates a cross-sectional view of some other embodiments ofthe IC of FIG. 1.

FIG. 7 illustrates a cross-sectional view of some other embodiments ofthe IC of FIG. 1.

FIG. 8 illustrates a cross-sectional view of some other embodiments ofthe IC of FIG. 1.

FIG. 9 illustrates a cross-sectional view of some embodiments of adisplay device comprising some embodiments of the IC of FIG. 1.

FIGS. 10A-10B illustrate various views of some other embodiments of thedisplay device of FIG. 9.

FIGS. 11A-11B through 24A-24B illustrate a series of cross-sectionalviews of some embodiments of a method for forming some embodiments ofthe IC of FIG. 1.

FIG. 25 illustrates a flowchart of some embodiments of a method forforming some embodiments of the IC of FIG. 1.

FIGS. 26A-26B through 28A-28B illustrate a series of various views ofsome embodiments of a method for forming a first singulated diecomprising some embodiments of the IC of FIG. 1.

FIG. 29 illustrates a cross-sectional view of some embodiments of amethod for forming a display device comprising the first singulated dieformed in FIGS. 26A-26B through 28A-28B.

FIG. 30 illustrates a flowchart of some embodiments of a method for: (1)forming a singulated die comprising some embodiments of the IC 100 ofFIG. 1; and (2) forming a display device comprising the singulated die.

DETAILED DESCRIPTION

The present disclosure will now be described with reference to thedrawings wherein like reference numerals are used to refer to likeelements throughout, and wherein the illustrated structures are notnecessarily drawn to scale. It will be appreciated that this detaileddescription and the corresponding figures do not limit the scope of thepresent disclosure in any way, and that the detailed description andfigures merely provide a few examples to illustrate some ways in whichthe inventive concepts can manifest themselves.

The present disclosure provides many different embodiments, or examples,for implementing different features of this disclosure. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

According to some packaging processes using a nickel/gold (Ni/Au)bumping process, a first dielectric layer (e.g., silicon nitride (SiN))is formed covering a copper pad, and a second dielectric layer (e.g.,silicon dioxide (SiO₂)) is formed covering the first dielectric layer. Afirst etch is performed into the second dielectric layer. The first etchstops on the first dielectric layer and forms a first opening overlyingthe copper pad. Thereafter, a metal comprising sidewall barrierstructure (e.g., titanium nitride (TiN)) is formed lining sidewalls ofthe first opening. A second etch is then performed into the firstdielectric layer. The second etch forms a second opening that exposesthe copper pad and that is laterally spaced between sidewalls of thefirst opening. A Ni/Au bump is formed on the copper pad and along themetal comprising sidewall barrier structure. The Ni/Au bump comprises anickel layer on the copper pad, and a gold layer overlying the nickellayer. The metal comprising sidewall barrier structure blocks orotherwise slows movement (e.g., diffusion) of copper from the copper padto the gold layer along sidewalls of the nickel layer. This prevents thecopper from contaminating the gold layer, which may negatively impactyield during bulk manufacture and/or packaging of an IC using thepackaging processes.

A challenge with the packaging processes is that the Ni/Au bump mayextend vertically over an upper surface of the second dielectric layer.The Ni/Au bump may vertically extend over the upper surface of thesecond dielectric layer, for example, due to the gold layer over-platingon the metal comprising sidewall barrier structure. Due to a height ofthe metal comprising sidewall barrier structure, the over-plating of thegold layer on the metal comprising barrier structure may result in thegold layer vertically extending over the upper surface of the seconddielectric layer. In some embodiments, the over-plating results in a“fence” structure (e.g., an outer ring-like portion) that verticallyextends over the upper surface of the second dielectric layer andoverlies the metal comprising sidewall barrier structure. Because theNi/Au bump extends vertically over the second dielectric layer,bondability of the Ni/Au bump and/or the second dielectric layer to atransparent screen panel (e.g., a glass screen panel) and/or a carriersubstrate (e.g., carrier wafer) may be negatively impacted (e.g., due toseams (e.g., voids) between the carrier substrate and the Ni/Au bumpand/or second dielectric layer). Accordingly, the Ni/Au bump extendingvertically over the upper surface of the second dielectric layer maylead to a low yield during the bulk manufacture and/or packaging of anIC using the packaging processes.

Various embodiments of the present application are directed toward amask transfer method for a bumping process (e.g., Ni/Au bumpingprocess), as well as a related apparatus. In some embodiments, themethod comprises receiving a workpiece comprising a first dielectriclayer covering a conductive pad and a second dielectric layer coveringthe first dielectric layer. A first opening is formed in the seconddielectric layer and at least partially between sidewalls of theconductive pad. A sidewall barrier structure is formed over the firstdielectric layer and along sidewalls of the first opening. A hardmasklayer is formed lining the second dielectric layer, the sidewall barrierstructure, and a portion of the first dielectric layer disposed betweeninner sidewalls of the sidewall barrier structure. A masking layer isformed lining the hardmask layer and filing the first opening.

An upper portion of the masking layer is removed, such that a lowerportion of the masking layer is disposed in the first opening and has anupper surface disposed between an upper surface of the second dielectriclayer and an upper surface of the first dielectric layer. Thereafter, anupper portion of the hardmask layer is removed, such that a lowerportion of the hardmask layer is disposed in the first opening and hasan upper surface that is substantially aligned with the upper surface ofthe lower portion of the masking layer. An upper portion of the sidewallbarrier structure is then removed, such that a lower portion of thesidewall barrier structure has an upper surface disposed beneath theupper surface of the second dielectric layer and spaced from the uppersurface of the second dielectric layer by a non-zero distance.

Thereafter, the lower portion of the hardmask layer and the lowerportion of the masking layer are removed. A second opening is thenformed in the first dielectric layer to expose the conductive pad. Thesecond opening is formed between the sidewalls of the first opening. Alower bumping structure is then formed on the conductive layer and atleast partially along the inner sidewalls of the lower portion of thesidewall barrier structure. An upper bumping structure is then formedcovering the lower bumping structure and the sidewall barrier structure.Because the upper surface of the lower portion of the sidewall barrierstructure is disposed beneath the upper surface of the second dielectriclayer and spaced from the upper surface of the second dielectric layerby the non-zero distance, a height of the lower portion of the sidewallbarrier structure may prevent the upper bumping structure fromvertically extending over the upper surface of the second dielectriclayer (e.g., the height of the lower portion of the sidewall barrierstructure being such that over-plating on the lower portion of thesidewall barrier structure does not result in the upper bumpingstructure extending vertically over the upper surface of the seconddielectric structure). Thus, the upper bumping structure may not beformed with a “fence” structure that vertically extends over the uppersurface of the second dielectric layer. Accordingly, the mask transfermethod for the bumping process may improve yield during bulk manufactureand/or the packaging of ICs.

FIG. 1 illustrates a cross-sectional view of some embodiments of anintegrated circuit (IC) 100 having a bumping structure.

The IC 100 comprises a semiconductor substrate 102. The semiconductorsubstrate 102 may comprise any type of semiconductor body (e.g.,monocrystalline silicon/CMOS bulk, silicon-germanium (SiGe), silicon oninsulator (SOI), etc.). One or more semiconductor devices 104 may bedisposed on/in the semiconductor substrate 102. The one or moresemiconductor devices 104 may be or comprise, for example,metal-oxide-semiconductor (MOS) field-effect transistors (FETs), someother MOS devices, or some other semiconductor devices. For example, theone or more semiconductor devices 104 may be a MOSFET comprising a pairof source/drain regions 106 disposed in the semiconductor substrate 102,a gate dielectric 108 disposed over the semiconductor substrate 102 andbetween the source/drain regions 106, and a gate electrode 110 disposedover the gate dielectric 108 and between the source/drain regions 106.

An interlayer dielectric (ILD) structure 112 is disposed over thesemiconductor substrate 102 and the one or more semiconductor devices104. In some embodiments, the ILD structure 112 comprises one or morestacked ILD layers, which may respectively comprise a low-k dielectric(e.g., a dielectric material with a dielectric constant less than about3.9), an oxide (e.g., silicon dioxide (SiO₂)), or the like. Aninterconnect structure 114 (e.g., copper interconnect) is embedded inthe ILD structure 112. The interconnect structure 114 comprises aplurality of first conductive features (e.g., metal lines, metal vias,metal contacts, etc.). The interconnect structure 114 is configured toelectrically couple the one or more semiconductor devices 104 together.In some embodiments, the interconnect structure 114 may comprise, forexample, copper (Cu), aluminum (Al), tungsten (W), some other conductivematerial, or a combination of the foregoing.

The interconnect structure 114 comprises an upper conductive pad 114 p.In some embodiments, the upper conductive pad 114 p is an uppermostfirst conductive feature of the interconnect structure 114. In furtherembodiments, the upper conductive pad 114 p is a copper pad. It will beappreciated that, in some embodiments, the upper conductive pad 114 p isone of a plurality of upper conductive pads that have substantiallyco-planar upper surfaces. In such embodiments, the plurality of upperconductive pads may be uppermost first conductive features of theinterconnect structure 114, and the upper conductive pad 114 p is one ofthe uppermost first conductive features.

A first dielectric structure 116 is disposed over the interconnectstructure 114 and the ILD structure 112. In some embodiments, the firstdielectric structure 116 comprises a nitride (e.g., silicon nitride(SiN)), an oxide (e.g., SiO₂), an oxy-nitride (e.g., silicon oxy-nitride(SiO_(X)N_(Y))), or the like. A second dielectric structure 118 isdisposed over the first dielectric structure 116, the interconnectstructure 114, and the ILD structure 112. In some embodiments, thesecond dielectric structure 118 comprises an oxide (e.g., SiO₂), anitride (e.g., SiN), an oxy-nitride (e.g., SiO_(X)N_(Y)), or the like.In further embodiments, the second dielectric structure 118 comprises adifferent dielectric material than the first dielectric structure 116.In yet further embodiments, the second dielectric structure 118 is SiO₂and the first dielectric structure 116 is SiN.

A bumping structure 120 is disposed over the interconnect structure 114and the ILD structure 112. The bumping structure comprises a lowerbumping structure 122 and an upper bumping structure 124. In someembodiments, the bumping structure 120 is disposed directly over theupper conductive pad 114 p.

The lower bumping structure 122 is vertically disposed between the upperbumping structure 124 and the upper conductive pad 114 p. The lowerbumping structure 122 is electrically coupled to the interconnectstructure 114. The lower bumping structure 122 extends verticallythrough the first dielectric structure 116. The lower bumping structure122 may extend vertically through the first dielectric structure 116 andcontact the upper conductive pad 114 p. The lower bumping structure 122is at least partially disposed in the second dielectric structure 118.In some embodiments, outer sidewalls of the lower bumping structure 122are disposed within outer sidewalls of the upper conductive pad 114 p.An upper surface of the lower bumping structure 122 is disposedvertically between an upper surface of the second dielectric structure118 and a lower surface of the second dielectric structure 118. In someembodiments, the upper surface of the lower bumping structure 122 is anuppermost surface of the lower bumping structure 122. In furtherembodiments, the upper surface of the second dielectric structure 118 isan uppermost surface of the second dielectric structure 118, and thelower surface of the second dielectric structure 118 is the lowermostsurface of the second dielectric structure 118.

A first sidewall barrier structure 126 is disposed in the seconddielectric structure 118 and along the outer sidewalls of the lowerbumping structure 122. The first sidewall barrier structure 126 isconfigured to block or otherwise slows movement (e.g., diffusion) ofatoms from the upper conductive pad 114 p to the upper bumping structure124 along sidewalls of the lower bumping structure 122. In someembodiments, the first sidewall barrier structure 126 is disposeddirectly over the upper conductive pad 114 p.

The first sidewall barrier structure 126 is vertically disposed betweenthe upper bumping structure 124 and the first dielectric structure 116.In some embodiments, outer sidewalls of the first sidewall barrierstructure 126 are disposed within the outer sidewalls of the upperconductive pad 114 p. In further embodiments, inner sidewalls of thefirst sidewall barrier structure 126 are substantially aligned withinner sidewalls of the first dielectric structure 116. The firstdielectric structure 116 vertically separates the first sidewall barrierstructure 126 from the upper conductive pad 114 p. An upper surface ofthe first sidewall barrier structure 126 is disposed vertically betweenthe upper surface of the second dielectric structure 118 and the lowersurface of the second dielectric structure 118. In some embodiments, theupper surface of the first sidewall barrier structure 126 issubstantially co-planar with the upper surface of the lower bumpingstructure 122. In further embodiments, the upper surface of the firstsidewall barrier structure 126 is an uppermost surface of the firstsidewall barrier structure 126.

The upper bumping structure 124 is disposed in the second dielectricstructure 118 and over both the lower bumping structure 122 and thefirst sidewall barrier structure 126. The upper bumping structure 124may cover the lower bumping structure 122 and/or the first sidewallbarrier structure 126. In some embodiments, an uppermost point of theupper bumping structure 124 is disposed at or below an uppermost pointof the second dielectric structure 118. In further embodiments, theupper bumping structure 124 has a substantially planar upper surface.Because the uppermost point of the upper bumping structure 124 isdisposed at or below an uppermost point of the second dielectricstructure 118, the upper surface of the upper bumping structure 124 doesnot have a “fence” structure that extends over the upper surface of thesecond dielectric structure 118. Accordingly, the bumping structure 120may improve the ability of the IC 100 to be bonded (e.g., bondability)to a transparent screen panel (e.g., a glass screen panel) and/or acarrier substrate (e.g., carrier wafer).

FIG. 2 illustrate an enlarged cross-sectional view of some embodimentsof an area 128 (see, e.g., FIG. 1) of FIG. 1.

As shown in FIG. 2, the first sidewall barrier structure 126 extendsvertically a first distance D₁ from the upper surface of the firstdielectric structure 116 toward the upper surface of the seconddielectric structure 118. The upper surface of the second dielectricstructure 118 is vertically spaced from the upper surface of the firstdielectric structure 116 by a second distance D₂. The first distance D₁is less than the second distance D₂. In some embodiments, the firstdistance D₁ is between ten percent and fifty percent of the seconddistance D₂. If the first distance D₁ is greater than fifty percent ofthe second distance D₂, the uppermost point of the upper bumpingstructure 124 may extend vertically over the uppermost point of thesecond dielectric structure 118 causing the upper bumping structure 124to have a “fence” that vertically extends over the upper surface of thesecond dielectric structure 118 (e.g., due to the process for formingthe upper bumping structure 124 over-plating on the upper surface of thefirst sidewall barrier structure 126). On the other hand, if the firstdistance D₁ is less than ten percent of the second distance D₂, theuppermost point of the upper bumping structure 124 may be disposed toofar below the uppermost point of the second dielectric structure 118causing the upper bumping structure 124 to have a severe “hump” (e.g., araised portion of the upper bumping structure disposed directly over thelower bumping structure 122) that vertically extends over the uppersurface of the second dielectric structure 118. In some embodiments, thefirst sidewall barrier structure 126 contacts the first dielectricstructure 116, the lower bumping structure 122, the upper bumpingstructure 124, and the second dielectric structure 118.

In some embodiments, the first sidewall barrier structures 126 has arcedinner sidewalls. The arced inner sidewalls of the first sidewall barrierstructure 126 may arc from a lower surface of the first sidewall barrierstructure 126 to the upper surface of the first sidewall barrierstructure 126. The arced inner sidewalls of the first sidewall barrierstructure 126 may arc towards the outer sidewalls of the first sidewallbarrier structure 126 from the lower surface of the first sidewallbarrier structure 126 to the upper surface of the first sidewall barrierstructure 126. In other embodiments, the inner sidewalls of the firstsidewall barrier structure 126 may be substantially vertical. In furtherembodiments, the lower surface of the first sidewall barrier structure126 is a lowermost surface of the first sidewall barrier structure 126.

The second dielectric structure 118 has inner sidewalls. In someembodiments, the inner sidewalls of the second dielectric structure 118are substantially vertical. The inner sidewalls of the second dielectricstructure 118 have a first lower portion and a first upper portiondisposed over the first lower portion. In some embodiments, the outersidewalls of the first sidewall barrier structure 126 engage the firstlower portion of the inner sidewalls of the second dielectric structure118. The outer sidewalls of the first sidewall barrier structure 126extend vertically along the first lower portion of the inner sidewallsof the second dielectric structure 118. In further embodiments, theouter sidewalls of the first sidewall barrier structure 126 aresubstantially vertical. In yet further embodiments, the first lowerportion is defined by lower portions of the inner sidewalls of thesecond dielectric structure 118 that extend vertically from the lowersurface of the second dielectric structure 118 to the upper surface ofthe first sidewall barrier structure 126. The first upper portion isdefined by upper portions of the inner sidewalls of the seconddielectric structure 118 that extend vertically from the lower portionsof the inner sidewalls of the second dielectric structure 118 to theupper surface of the second dielectric structure 118.

An angle Θ exists between one of the inner sidewalls of the firstsidewall barrier structure 126 and the lower surface of the firstsidewall barrier structure 126. In some embodiments, the angle Θ isbetween twenty degrees and ninety degrees. In further embodiments, theangle Θ is substantially the same between each of the inner sidewalls ofthe first sidewall barrier structure 126 and the lower surface of thefirst sidewall barrier structure 126.

In some embodiments, an outermost perimeter of the first sidewallbarrier structure 126 is disposed within an outermost perimeter of theupper conductive pad 114 p. In other embodiments, the outermostperimeter of the first sidewall barrier structure 126 may be at leastpartially disposed outside the outermost perimeter of the upperconductive pad 114 p. In such embodiments, one or more outer sidewallsof the outer sidewalls of the upper conductive pad 114 p are disposedwithin the outer sidewalls of the first sidewall barrier structure 126.

In some embodiments, the upper surface of the first sidewall barrierstructure 126 is substantially planar. In further embodiments, the uppersurface of the first sidewall barrier structure 126 laterally surroundsthe lower bumping structure 122. In such embodiments, the upper surfaceextends laterally around the lower bumping structure 122 in a continuousclosed path. In further embodiments, the first sidewall barrierstructure 126 comprises, for example, titanium (Ti), titanium nitride(TiN), some other material that sufficiently blocks diffusion of atomsfrom the upper conductive pad 114 p to the upper bumping structure 124,or a combination of the foregoing.

The lower bumping structure 122 is disposed between the inner sidewallsof the first sidewall barrier structure 126 and between inner sidewallsof the first dielectric structure 116. In some embodiments, the innersidewalls of the first dielectric structure 116 are substantiallyvertical. In further embodiments, the inner sidewalls of the firstdielectric structure 116 are disposed between the inner sidewalls of thesecond dielectric structure 118. The upper conductive pad 114 p is atleast partially disposed between the inner sidewalls of the firstdielectric structure 116.

In some embodiments, the lower bumping structure 122 contacts both thefirst dielectric structure 116 and the first sidewall barrier structure126. In further embodiments, a lower surface of the lower bumpingstructure 122 is substantially co-planar with a lower surface of thefirst dielectric structure 116. In further embodiments, the lowerbumping structure 122 comprises, for example, pure nickel (Ni), a Nialloy, some other suitable metal, or a combination of the foregoing. Inyet further embodiments, the lower surface of the lower bumpingstructure 122 is a lowermost surface of the lower bumping structure 122.

The outer sidewalls of the lower bumping structure 122 has a secondlower portion and a second upper portion disposed over the second lowerportion. In some embodiments, the second lower portion of the outersidewalls of the lower bumping structure 122 engage the inner sidewallsof the first dielectric structure 116. The second lower portion isdefined by lower portions of the outer sidewalls of the lower bumpingstructure 122 that extend vertically from the lower surface of the lowerbumping structure 122 to the upper surface of the first dielectricstructure 116. In further embodiments, the lower portions of the outersidewalls of the lower bumping structure 122 are substantially vertical.

The second upper portion of the outer sidewalls of the lower bumpingstructure 122 engage the inner sidewalls of the first sidewall barrierstructure 126. The second upper portion is defined by upper portions ofthe outer sidewalls of the lower bumping structure 122 that extendvertically from the lower portions of the outer sidewalls of the lowerbumping structure 122 to the upper surface of the lower bumpingstructure 122. In some embodiments, the upper portions of the outersidewalls of the lower bumping structure 122 are arced. In furtherembodiments, the arced upper portions of the outer sidewalls of thelower bumping structure 122 arc toward the outer sidewalls of the firstsidewall barrier structure 126 from the lower portions of the outersidewalls of the lower bumping structure 122 to the upper surface of thelower bumping structure 122. In yet further embodiments, the arced outersidewalls of the lower bumping structure 122 may arc so that at least aportion of the arced outer sidewalls of the lower bumping structure 122are disposed outside the inner sidewalls of the first dielectricstructure 116. In other embodiments, the upper portions of the outersidewalls of the lower bumping structure 122 are substantially vertical.

In some embodiments, an outermost perimeter of the lower bumpingstructure 122 is disposed within the outermost perimeter of the upperconductive pad 114 p. In other embodiments, the outermost perimeter ofthe lower bumping structure 122 may be at least partially disposedoutside the outermost perimeter of the upper conductive pad 114 p. Insuch embodiments, one or more outer sidewalls of the outer sidewalls ofthe upper conductive pad 114 p are disposed within the outer sidewallsof the lower bumping structure 122.

In some embodiments, the upper bumping structure 124 contacts both thelower bumping structure 122 and the first sidewall barrier structure126. The upper bumping structure 124 may completely cover both the lowerbumping structure and the first sidewall barrier structure 126. Infurther embodiments, a lower surface of the upper bumping structure 124may be substantially planar. In further embodiments, the upper bumpingstructure 124 may comprise, for example, gold (Au), platinum (Pt), someother suitable metal, or a combination of the foregoing. In yet furtherembodiments, the lower surface of the upper bumping structure 124 is alowermost surface of the upper bumping structure 124.

In some embodiments, outer sidewalls of the upper bumping structure 124engage the first upper portion of the outer sidewalls of the seconddielectric structure 118. In further embodiments, outer sidewalls of theupper bumping structure 124 are disposed within the outer sidewalls ofthe upper conductive pad 114 p. The outer sidewalls of the upper bumpingstructure 124 may be substantially vertical. In yet further embodiments,the outer sidewalls of the upper bumping structure 124 are substantiallyaligned with the outer sidewalls of the first sidewall barrier structure126.

In some embodiments, the upper surface of the upper bumping structure124 is substantially co-planar with the upper surface of the seconddielectric structure 118. In further embodiments, the lower surface ofthe upper bumping structure 124 is substantially planar. In yet furtherembodiments, a height of the upper bumping structure 124 (e.g., adistance between the upper surface of the upper bumping structure 124and the lower surface of the upper bumping structure 124) is greaterthan or equal to the first distance D₁.

In some embodiments, an outermost perimeter of the upper bumpingstructure 124 is disposed within the outermost perimeter of the upperconductive pad 114 p. In other embodiments, the outermost perimeter ofthe upper bumping structure 124 may be at least partially disposedoutside the outermost perimeter of the upper conductive pad 114 p. Insuch embodiments, one or more outer sidewalls of the upper conductivepad 114 p are disposed within the outer sidewalls of the upper bumpingstructure 124.

FIG. 3 illustrate an enlarged cross-sectional view of some otherembodiments of the area 128 (see, e.g., FIG. 1) of FIG. 1.

As shown in FIG. 3, the upper surface of the upper bumping structure 124may be disposed below the upper surface of the second dielectricstructure 118. In such embodiments, the upper surface of the upperbumping structure 124 may be spaced from the upper surface of the seconddielectric structure 118 by less than or equal to 1,000 angstrom (Å). Ifthe upper surface of the upper bumping structure 124 is spaced from theupper surface of the second dielectric structure 118 by greater than1,000 Å, an electrical connection between an overlying second conductivefeature (e.g., conductive wire) and the upper bumping structure 124 maynot be satisfactory (e.g., too high of a resistance between the upperbumping structure 124 and the overlying second conductive feature).

FIG. 4 illustrate an enlarged cross-sectional view of some otherembodiments of the area 128 (see, e.g., FIG. 1) of FIG. 1.

As shown in FIG. 4, the upper surface of the lower bumping structure 122may be disposed below the upper surface of the first sidewall barrierstructure 126. In some embodiments, the upper bumping structure 124 hasfirst outer sidewalls that engage the first upper portion of the innersidewalls of the second dielectric structure 118, and second outersidewalls that engage the inner sidewalls of the first sidewall barrierstructure 126. The second outer sidewalls of the upper bumping structure124 partially extend vertically along the inner sidewalls of the firstsidewall barrier structure 126. The second outer sidewalls of the upperbumping structure 124 are disposed between the first outer sidewalls ofthe upper bumping structure 124. In further embodiments, the upperbumping structure 124 has a first lower surface that engages the uppersurface of the lower bumping structure 122 and a second lower surfacethat engages the upper surface of the first sidewall barrier structure126. The second lower surface of the upper bumping structure 124 isdisposed above the first lower surface of the upper bumping structure124. In yet further embodiments, the second lower surface of the upperbumping structure 124 laterally extends around the first lower surfaceof the upper bumping structure 124 in a continuous closed path.

FIG. 5 illustrate an enlarged cross-sectional view of some otherembodiments of the area 128 (see, e.g., FIG. 1) of FIG. 1.

As shown in FIG. 5, the lower bumping structure 122 may be partiallydisposed over the first sidewall barrier structure 126. In someembodiments, the upper surface of the lower bumping structure 122 has afirst concave portion and a first ring-shaped portion. The firstring-shaped portion extends laterally around the first concave portionin a continuous closed path. In some embodiments, the first ring-shapedportion is disposed directly over the first sidewall barrier structure126. In further embodiments, a lowermost point of the first concaveportion is disposed over the upper surface of the first sidewall barrierstructure 126. In other embodiments, the lowermost point of the firstconcave portion is disposed below the upper surface of the firstsidewall barrier structure 126.

In some embodiments, the lower surface of the upper bumping structure124 has a second concave portion and a second ring-shaped portion. Thesecond concave portion engages the first concave portion, and the secondring-shaped portion engages the first ring-shaped portion. The secondring-shaped portion extends laterally around the second concave portionin a continuous closed path. In some embodiments, the second ring-shapedportion is disposed directly over the first ring-shaped portion. Infurther embodiments, a lowermost point of the second concave portion isdisposed over the upper surface of the first sidewall barrier structure126. In other embodiments, the lowermost point of the second concaveportion is disposed below the upper surface of the first sidewallbarrier structure 126.

In some embodiments, the upper surface of the upper bumping structure124 has a third concave portion and a third ring-shaped portion. Thethird ring-shaped portion extends laterally around the third concaveportion in a continuous closed path. In some embodiments, the thirdring-shaped portion is disposed directly over the first ring-shapedportion and/or the second ring-shaped portion. A lowermost point of thethird concave portion is disposed below the upper surface of the seconddielectric structure 118.

An uppermost point of the third ring-shaped portion is disposed at orbelow the uppermost point of the second dielectric structure 118.Because the uppermost point of the third ring-shaped portion is disposedat or below the uppermost point of the second dielectric structure 118,the upper bumping structure 124 does not have a “fence” structure 502(illustrated as a dotted line to provide additional context) thatextends over the upper surface of the second dielectric structure 118.Accordingly, the bumping structure 120 may improve the bondability ofthe IC 100 to a transparent screen panel (e.g., a glass screen panel)and/or a carrier substrate (e.g., carrier wafer). In other words, if thebumping structure 120 had the “fence” structure 502, the “fence”structure 502 would be a high stress point that would negatively impactthe bondability of the IC 100 to a transparent screen panel and/or acarrier substrate (e.g., due to the high stress point causingcracking/shattering/delamination of the transparent screen panel). Insome embodiments, the uppermost point of the third ring-shaped portionis not disposed over the uppermost point of the second dielectricstructure 118. Because the uppermost point of the third ring-shapedportion is not disposed over the uppermost point of the seconddielectric structure 118, the upper bumping structure 124 does not havethe “fence” structure 502 that extends over the upper surface of thesecond dielectric structure 118. Accordingly, the bumping structure 120may improve the bondability of the IC 100 to a transparent screen panel(e.g., a glass screen panel) and/or a carrier substrate (e.g., carrierwafer).

FIG. 6 illustrates a cross-sectional view of some other embodiments ofthe IC 100 of FIG. 1.

As shown in FIG. 6, the IC 100 may comprise a plurality of bumpingstructures disposed over the interconnect structure 114 and the ILDstructure 112. The bumping structures of the plurality of bumpingstructures are electrically coupled to the interconnect structure 114.In some embodiments, bumping structures of the plurality of bumpingstructures are electrically coupled to the interconnect structure 114via a plurality of upper conductive pads, respectively. Each of thebumping structures of the plurality of bumping structures comprises alower bumping structure 122, an upper bumping structure 124, and a firstsidewall barrier structure 126. It will be appreciated that, in someembodiments, the bumping structure 120 is the only bumping structuredisposed on the IC 100 (e.g., the IC 100 only comprises one bumpingstructure).

FIG. 7 illustrates a cross-sectional view of some other embodiments ofthe IC 100 of FIG. 1.

As shown in FIG. 7, the IC 100 comprises a carrier substrate 702disposed over the bumping structure 120, the ILD structure 112, and thesemiconductor substrate 102. The carrier substrate 702 may be bonded tothe second dielectric structure 118 and/or the upper bumping structure124. In some embodiments, the carrier substrate 702 may be, for example,a polyimide substrate, semiconductor substrate, or the like. Because theIC 100 comprises the bumping structure 120, an improved bond interfacebetween the carrier substrate 702 and the IC 100 exists, therebyimproving yield (e.g., by preventing damage to the IC 100 during bondingof the IC 100 to the carrier substrate 702).

FIG. 8 illustrates a cross-sectional view of some other embodiments ofthe IC 100 of FIG. 1.

As shown in FIG. 8, the IC 100 comprises a screen panel 802 disposedover the bumping structure 120, the ILD structure 112, and thesemiconductor substrate 102. The screen panel 802 is bonded to the IC100. The screen panel comprises a transparent bonding layer 804 (e.g.,silicone gel, urethane, or some other suitable adhesive) and atransparent cover structure 806 (e.g., a cover glass, touchscreen, orthe like). The transparent bonding layer 804 is disposed between thetransparent cover structure 806 and both the bumping structure 120 andthe second dielectric structure 118. Because the IC 100 comprises thebumping structure 120, an improved bond interface between the screenpanel 802 and the IC 100 exists, thereby improving yield (e.g., bypreventing damage to the IC 100 and/or screen panel 802 during bondingof the IC 100 to the screen panel 802).

FIG. 9 illustrates a cross-sectional view of some embodiments of adisplay device 900 comprising some embodiments of the IC 100 of FIG. 1.

As shown in FIG. 9, the display device 900 comprises the IC 100 and aplurality of light-emitting ICs 902 a-c. For example, the display devicecomprises a first light-emitting IC 902 a, a second light-emitting IC902 b, and a third light-emitting IC 902 c. The light-emitting ICs 902a-c comprise one or more light-emitting structures 904 a-c (e.g.,light-emitting diode (LED), microLED, etc.). For example, the firstlight-emitting IC 902 a comprises a first light-emitting structure 904a, the second light-emitting IC 902 b comprises a second light-emittingstructure 904 b, and the third light-emitting IC 902 c comprises a thirdlight-emitting structure 904 c. The light-emitting ICs 902 a-c maycomprise one or more semiconductor devices (not illustrated in FIG. 9for ease of illustration) disposed on a semiconductor substrate (notillustrated in FIG. 9 for ease of illustration) and electrically coupledto the one or more light-emitting structures 904 a-c.

The one or more light-emitting structures 904 a-c are configured to emitlight having a specific wavelength through the screen panel 802 (e.g.,illustrated by arrows in FIG. 9). In some embodiments, the light emittedby the one or more light-emitting structures 904 a-c is colored light.For example, the first light-emitting structure 904 a is configured toemit red light, the second light-emitting structure 904 b is configuredto emit green light, and the third light-emitting structure 904 c isconfigured to emit blue light.

The IC 100 and the plurality of light-emitting ICs 902 a-c are bonded tothe screen panel 802. Because the IC 100 comprises the bumping structure120, an improved bond interface between the screen panel 802 and the IC100 exists. For example, because the upper bumping structure 124 doesnot have the “fence” structure 502 (see, e.g., FIG. 5) that extends overthe upper surface of the second dielectric structure 118, the bondinterface between the IC 100 and the screen panel 802 is improved. Theimproved bond interface may improve robustness of the display device 900(e.g., resistance of the screen panel 802 to crack/shatter/delaminate inresponse to a given mechanical force being applied on the transparentcover structure 806) and/or yield of the display device 900. Forexample, the improved bond interface may improve the robustness of thedisplay device 900 and/or yield of the display device 900 due to thebumping structure 120 reducing high-stress points that may causecracking/shattering/delamination of the screen panel 802 duringfabrication (or during consumer use) of the display device 900 (e.g.,due to the reduction in high-stress points increasing an amount ofmechanical force that can be applied on the transparent cover structure806 before cracking/shattering/delamination of the screen panel 802).

In some embodiments, one or more second conductive features 906 (e.g.,conductive lines) are disposed in the transparent cover structure 806.The one or more second conductive features 906 are configured toelectrically couple the light-emitting ICs 902 a-c to the IC 100. Insome embodiments, the transparent bonding layer 804 is configured toprovide electrical connections (illustrated by a dotted line in FIG. 9)between the one or more second conductive features 906, the IC 100, andthe light-emitting ICs 902 a-c. In further embodiments, the bumpingstructure 120 is electrically coupled to the one or more secondconductive features 906. In yet further embodiments, input/output (110)structures (not illustrated in FIG. 9 for ease of illustration) of thelight-emitting ICs 902 a-c are electrically coupled to the one or moresecond conductive features 906. It will be appreciated that, in someembodiments, a filler material is disposed between the IC 100 and thelight-emitting ICs 902 a-c to provide structural support between the IC100 and the light-emitting ICs 902 a-c.

In some embodiments, the IC 100 comprises control circuitry for thedisplay device 900. For example, the control circuitry is configured toprovide electrical signals (e.g., voltages) to the light-emitting ICs902 a-c so that the display device 900 displays a desired image. Infurther embodiments, the IC 100 does not comprise any light-emittingstructures. In such embodiments, the IC 100 may only comprise circuitryfor controlling the light-emitting ICs 902 a-c.

FIGS. 10A-10B illustrate various views of some other embodiments of thedisplay device 900 of FIG. 9. FIG. 10A illustrates an isometric view ofsome other embodiments of the display device of FIG. 9. FIG. 10Billustrates a cross-sectional view of some embodiments of the displaydevice of FIG. 10A taken along line A-A of FIG. 10A.

As shown in FIGS. 10A-10B, the IC 100 and the light-emitting ICs 902 a-cmay be disposed in an array (e.g., 5×5 array). In some embodiments, theIC 100 may be disposed at a center of the array. It will be appreciatedthat, in other embodiments, the IC 100 may be disposed anywhere in thearray (or outside of the array). It will further be appreciated that thedisplay device 900 may comprise other sized arrays (e.g., a 4×4 array,7×7 array, etc.). The IC 100 is electrically coupled to thelight-emitting ICs 902 a-c of the array (e.g., via one or more secondconductive features 906 (not illustrated in FIGS. 10A-10B for clarity).The IC 100 is configured to provide electrical signals (e.g., voltages)to each of the light-emitting ICs 902 a-c so that the display device 900displays a desired image.

The screen panel 802 extends continuously over the IC 100 and thelight-emitting ICs 902 a-c. Each of the light-emitting ICs 902 a-c andthe IC 100 is bonded to the screen panel 802. It will be appreciatedthat the display device 900 may comprise any number of arrays, each ofwhich comprise the IC 100 and the light-emitting ICs 902 a-c, bonded tothe screen panel 802. For example, the display device may comprise afirst array comprising a first IC (e.g., IC 100) and a first pluralityof light-emitting ICs (e.g., light-emitting ICs 902 a-c) and a secondarray disposed on a side of the first array and comprising a second IC(e.g., IC 100) and a second plurality of light-emitting ICs (e.g.,light-emitting ICs 902 a-c). The first IC is configured to control thefirst plurality of light-emitting ICs, and the second IC is configuredto control the second plurality of light-emitting ICs. Depending on adesired display size of the display device 900, the display device 900comprises a predefined number of arrays arranged in a larger array sothat the display device 900 has the desired display size (e.g., 1.5″,1.7″, 5.8″, 6.1″, 6.5″ 10.2″, 10.5″, 12.9″, 15.4″, 17″, 35″, 42″, 48″55″, 65″, 75″, etc.).

FIGS. 11A-11B through 24A-24B illustrate a series of cross-sectionalviews of some embodiments of a method for forming some embodiments ofthe IC 100 of FIG. 1. Figures with a suffix of “A” (e.g., FIG. 11A)illustrate a series of cross-sectional views of some embodiments of themethod for forming some embodiments of the IC 100 of FIG. 1. Figureswith a suffix of “B” (e.g., FIG. 11B) illustrate a series of enlargedcross-sectional views of an area of a corresponding figure having asuffix of “A.” For example, FIG. 11B illustrates an enlargedcross-sectional view of the area 128 of FIG. 11A, FIG. 12B illustratesan enlarged cross-sectional view of the area 128 of FIG. 12A, and soforth.

As shown in FIGS. 11A-11B, a workpiece 1102 is received. The workpiece1102 comprises a semiconductor substrate 102. One or more semiconductordevices 104 are disposed on/in the semiconductor substrate 102. An ILDstructure 112 is disposed over the semiconductor substrate and the oneor more semiconductor devices 104. An interconnect structure 114 isembedded in the ILD structure 112 and disposed over the semiconductorsubstrate 102. The interconnect structure 114 comprises an upperconductive pad 114 p.

In some embodiments, a method for forming the workpiece 1102 comprisesforming the one or more semiconductor devices 104 by forming pairs ofsource/drain regions in the semiconductor substrate 102 (e.g., via ionimplantation). Thereafter, gate dielectrics and gate electrodes areformed over the semiconductor substrate 102 and between the pairs ofsource/drain regions (e.g., via deposition/growth processes and etchingprocesses). A first ILD layer is then formed over the one or moresemiconductor devices 104, and contact openings are formed in the firstILD layer. A conductive material (e.g., W) is formed on the first ILDlayer and in the contact openings. Thereafter, a planarization process(e.g., chemical-mechanical polishing (CMP)) is performed into theconductive material to form conductive contacts (e.g., metal contacts)in the first ILD layer.

A second ILD layer is then formed over the first ILD layer and theconductive contacts, and first conductive line trenches are formed inthe second ILD layer. A conductive material (e.g., Cu) is formed on thesecond ILD layer and in the first conductive line trenches. Thereafter,a planarization process (e.g., CMP) is performed into the conductivematerial to form conductive lines (e.g., metal 1) in the second ILD. Athird ILD layer is then formed over the second ILD layer and theconductive line, and conductive via openings are formed in the third ILDlayer. A conductive material (e.g., Cu) is formed on the third ILD layerand in the conductive via openings. Thereafter, a planarization process(e.g., CMP) is performed into the conductive material to form conductivevias (e.g., metal vias) in the third ILD layer. The above processes forforming the conductive line and the conductive vias may be repeated anynumber of times to form the ILD structure 112 and the interconnectstructure 114 embedded in the ILD structure 112.

Also shown in FIGS. 11A-11B, a first dielectric layer 1104 is formedover the semiconductor substrate 102, the ILD structure 112, and theinterconnect structure 114. The first dielectric layer 1104 covers theupper conductive pad 114 p. In some embodiments, the first dielectriclayer 1104 comprises a nitride (e.g., SiN), an oxide (e.g., SiO₂), anoxy-nitride (e.g., SiO_(X)N_(Y)), some other dielectric material, or acombination of the foregoing. In further embodiments, the firstdielectric layer 1104 is SiN. The first dielectric layer 1104 may beformed by depositing the first dielectric layer 1104 on the ILDstructure 112 and the upper conductive pad 114 p. In some embodiments,the first dielectric layer 1104 may be deposited by, for example,chemical vapor deposition (CVD), physical vapor deposition (PVD), atomiclayer deposition (ALD), some other deposition process, or a combinationof the foregoing.

Also shown in FIGS. 11A-11B, a second dielectric layer 1106 is formedover the first dielectric layer 1104. In some embodiments, the seconddielectric layer 1106 comprises an oxide (e.g., SiO₂), a nitride (e.g.,SiN), an oxy-nitride (e.g., SiO_(X)N_(Y)), some other dielectricmaterial, or a combination of the foregoing. In further embodiments, thesecond dielectric layer 1106 is SiO₂. The second dielectric layer 1106may be formed by depositing the second dielectric layer 1106 on thefirst dielectric layer 1104. In some embodiments, the second dielectriclayer 1106 may be deposited by, for example, CVD, PVD, ALD, some otherdeposition process, or a combination of the foregoing.

As shown in FIGS. 12A-12B, a second dielectric structure 118 is formedover the first dielectric layer 1104. The second dielectric structure118 is formed with inner sidewalls that are laterally spaced apart. Insome embodiments, the inner sidewalls of the second dielectric structure118 are disposed within an outermost perimeter of the upper conductivepad 114 p. In other embodiments, one or more of the inner sidewalls ofthe second dielectric structure 118 are disposed outside the outermostperimeter of the upper conductive pad 114 p. In further embodiments, theinner sidewalls of the second dielectric structure are substantiallyvertical.

In some embodiments, a process for forming the second dielectricstructure 118 comprises forming a patterned masking layer (not shown) onthe second dielectric layer 1106 (see, e.g., FIGS. 11A-11B). In furtherembodiments, the patterned masking layer may be formed by forming amasking layer (not shown) over the second dielectric layer 1106,exposing the masking layer to a pattern (e.g., via photolithography),and developing the masking layer to form the patterned masking layer.Thereafter, with the patterned masking layer in place, an etchingprocess (e.g., wet/dry etch) is performed on the second dielectric layer1106 to remove unmasked portions of the second dielectric layer 1106,thereby forming the second dielectric structure 118. The seconddielectric structure 118 corresponds to the portion of the seconddielectric layer 1106 remaining over the first dielectric layer 1104after the etching process is performed on the second dielectric layer1106. Subsequently, the patterned masking layer may be stripped away.

After the second dielectric structure 118 is formed, a third opening1202 is disposed in the second dielectric structure 118 and over theupper conductive pad 114 p. The third opening 1202 is defined by a firstcentral portion of an upper surface of the first dielectric layer 1104and the inner sidewalls of the second dielectric structure 118. Thefirst central portion of the upper surface of the first dielectric layer1104 is disposed directly between the inner sidewalls of the seconddielectric structure 118. In some embodiments, an uppermost boundary ofthe third opening 1202 is disposed at (or below) an upper surface of thesecond dielectric structure 118. In further embodiments, the thirdopening 1202 is formed with an outermost perimeter disposed within theoutermost perimeter of the upper conductive pad 114 p. In otherembodiments, the third opening 1202 is formed so that the outermostperimeter of the third opening 1202 is formed at least partially outsidethe outermost perimeter of the upper conductive pad 114 p.

As shown in FIGS. 13A-13B, a barrier layer 1302 is formed over thesecond dielectric structure 118 and the first dielectric layer 1104. Thebarrier layer 1302 is formed lining the sidewalls of the third opening1202, the first central portion of the upper surface of the firstdielectric layer 1104, and the upper surface of the second dielectricstructure 118. In some embodiments, the barrier layer 1302 may comprise,for example, Ti, TiN, some other material that sufficiently blocksdiffusion of atoms from the upper conductive pad 114 p to the upperbumping structure 124, or a combination of the foregoing. The barrierlayer 1302 may be formed as a conformal layer. In further embodiments, aprocess for forming the barrier layer 1302 comprises depositing thebarrier layer 1302 on the second dielectric structure 118, on the firstdielectric layer 1104, and lining the sidewalls of the third opening1202. The barrier layer 1302 may be deposited by, for example, CVD, PVD,ALD, sputtering, some other deposition process, or a combination of theforegoing.

As shown in FIGS. 14A-14B, a second sidewall barrier structure 1402 isformed along the sidewalls of the third opening 1202. In someembodiments, the second sidewall barrier structure 1402 is formed with aheight that is substantially the same as a height of the third opening1202. In further embodiments, a process for forming the second sidewallbarrier structure 1402 comprises performing an etching process on thebarrier layer 1302 (see, e.g., FIGS. 13A-13B) to remove the barrierlayer 1302 from horizontal surfaces, leaving the barrier layer 1302along the sidewalls of the third opening 1202 as the second sidewallbarrier structure 1402.

As shown in FIGS. 15A-15B, a hardmask layer 1502 is formed over thesecond dielectric structure 118, the first dielectric layer 1104, andthe second sidewall barrier structure 1402. The hardmask layer 1502 isformed at least partially in the third opening 1202 and lining innersidewalls of the second sidewall barrier structure 1402. The hardmasklayer 1502 has a first density and the second dielectric structure 118has a second density that is less than the first density. In someembodiments, the hardmask layer 1502 is a conformal layer. The hardmasklayer 1502 may be or comprise, for example, an oxide (e.g., SiO₂), anitride (e.g., SiN), an oxy-nitride (e.g., SiO_(X)N_(Y)), or the like.In further embodiments, the hardmask layer is SiO₂. In yet furtherembodiments, the hardmask layer 1502 is a high-temperature oxide (HTO)(e.g., SiO₂ formed by a high-temperature deposition/growth process). Thehardmask layer 1502 may be formed with a thickness less than or equal to100 angstroms (Å).

In some embodiments, a process for forming the hardmask layer 1502comprises depositing the hardmask layer 1502 on the second dielectricstructure 118, on the first dielectric layer 1104, and on the innersidewalls of the second sidewall barrier structure 1402. The hardmasklayer 1502 may be deposited by, for example, CVD, PVD, ALD, sputtering,some other deposition process, or a combination of the foregoing. Infurther embodiments, the hardmask layer is formed in a processingchamber at a temperature greater than 400° C.

As shown in FIGS. 16A-16B, a first masking structure 1602 is formed overthe hardmask layer 1502 and the second dielectric structure 118. Thefirst masking structure 1602 is formed in the third opening 1202 (see,e.g., FIGS. 15A-15B). In some embodiments, the first masking structure1602 completely fills the third opening 1202. The first maskingstructure 1602 may be formed with a substantially planar upper surfacethat is disposed over an upper surface of the hardmask layer 1502. Insome embodiments, the first masking structure 1602 may comprise, forexample, a positive photoresist, a negative photoresist, or the like. Infurther embodiments, the upper surface of the first masking structure1602 is an uppermost surface of the first masking structure 1602. In yetfurther embodiments, the upper surface of the hardmask layer 1502 is anuppermost surface of the hardmask layer 1502.

In some embodiments, a process for forming the first masking structure1602 comprises depositing a masking layer (not shown) (e.g., positivephotoresist, negative photoresist, or the like) on the hardmask layer1502 and filling the third opening 1202. The masking layer may bedeposited by CVD, PVD, ALD, a spin coating process, a spray coatingprocess, a roller coating process, a dip coating process, some otherdeposition process, or a combination of the foregoing. The masking layeris then exposed to electromagnetic radiation (e.g., ultraviolet (UV)light), thereby forming the first masking structure 1602. In someembodiments, the masking layer may be exposed to a pattern ofelectromagnetic radiation (e.g., via photolithography) and thendeveloped, thereby forming the first masking structure 1602 with thepattern.

As shown in FIGS. 17A-17B, a second masking structure 1702 is formedover the first dielectric layer 1104 and in the second dielectricstructure 118. The second masking structure 1702 is formed directlybetween the inner sidewalls of the second sidewall barrier structure1402. In some embodiments, the second masking structure 1702 is formedwith an upper surface that is disposed below the upper surface of thesecond dielectric structure 118. In further embodiments, the secondmasking structure 1702 is formed directly over the upper conductive pad114 p. In yet further embodiments, the upper surface of the secondmasking structure 1702 is an uppermost surface of the second maskingstructure 1702.

In some embodiments, a process for forming the second masking structure1702 comprises performing a first etching process 1704 (e.g., wet/dryetching process) on the first masking structure 1602 (see, e.g., FIGS.16A-16B). The first etching process 1704 removes an upper portion of thefirst masking structure 1602, thereby leaving a lower portion of thefirst masking structure 1602 between the inner sidewalls of the secondsidewall barrier structure 1402 as the second masking structure 1702. Insome embodiments, the first etching process 1704 is a dry etchingprocess (e.g., reactive-ion etching). In further embodiments, the firstetching process 1704 may be a dry etching process that utilizes oxygenas a processing gas (and/or etchant) (e.g., oxygen plasma etching,oxygen plasma ashing, etc.).

As shown in FIGS. 18A-18B, a hardmask structure 1802 is formed over thefirst dielectric layer 1104 and in the second dielectric structure 118.The hardmask structure 1802 is formed directly between the innersidewalls of the second sidewall barrier structure 1402 and separatingthe second masking structure 1702 from the second sidewall barrierstructure 1402. In some embodiments, the hardmask structure 1802 isformed with an upper surface that is substantially planar with the uppersurface of the second masking structure 1702. In other embodiments, thehardmask structure 1802 is formed so that the upper surface of thehardmask structure 1802 is disposed over (or below) the upper surface ofthe second masking structure 1702. In further embodiments, the uppersurface of the hardmask structure 1802 is an uppermost surface of thehardmask structure 1802.

In some embodiments, a process for forming the hardmask structure 1802comprises performing a second etching process 1804 (e.g., wet/dryetching process) on the hardmask layer 1502 (see, e.g., FIGS. 17A-17B).The second etching process 1804 removes an upper portion of the hardmasklayer 1502, thereby leaving a lower portion of the hardmask layer 1502separating the second masking structure 1702 from the second sidewallbarrier structure 1402 as the hardmask structure 1802.

In some embodiments, the second etching process 1804 is a wet etchingprocess. In further embodiments, the second etching process 1804 is awet etching process that utilizes hydrofluoric acid (HF) as an etchant.In such embodiments, the wet etching process comprises exposing thehardmask layer 1502 to a first solution comprising HF. The firstsolution may have a concentration of about one percent HF. It will beappreciated that the first solution may have a different concentrationof HF (e.g., greater/less than about one percent HF). In further suchembodiments, the hardmask layer 1502 is exposed to the first solutionfor a first time interval. In yet further such embodiments, the firsttime interval may be about sixty seconds. If the first time interval isabout sixty second, a height of the hardmask structure 1802 may becontrolled such that the upper surface of the hardmask structure 1802 issubstantially planar with the upper surface of the second maskingstructure 1702; if the first time interval is greater/less than aboutsixty seconds, the height of the hardmask structure 1802 may bereduced/increased such that the upper surface of the hardmask structure1802 is disposed below/above the upper surface of the second maskingstructure 1702. It will be appreciated that the first time interval maybe any time interval (e.g., greater than sixty seconds) that issufficient to form the hardmask structure 1802 with a predefined height.

As shown in FIGS. 19A-19B, a first sidewall barrier structure 126 isformed over the first dielectric layer 1104 and in the second dielectricstructure 118. The first sidewall barrier structure 126 is formeddirectly between inner sidewalls of the second dielectric structure 118and separating the hardmask structure 1802 from the inner sidewalls ofthe second dielectric structure 118. In some embodiments, the firstsidewall barrier structure 126 is formed with an upper surface that issubstantially planar.

The first sidewall barrier structure 126 is formed extending verticallya first distance D₁ from an upper surface of the first dielectric layer1104 toward the upper surface of the second dielectric structure 118.The upper surface of the second dielectric structure 118 is verticallyspaced from the upper surface of the second dielectric structure 118 bya second distance D₂. The first distance D₁ is less than the seconddistance D₂. In some embodiments, the first distance D₁ is between tenpercent and fifty percent of the second distance D₂.

In some embodiments, a process for forming the first sidewall barrierstructure 126 comprises performing a third etching process 1903 (e.g.,dry/wet etching process) on the second sidewall barrier structure 1402(see, e.g., FIGS. 18A-18B). The third etching process 1903 removes anupper portion of the second sidewall barrier structure 1402, therebyforming the first sidewall barrier structure 126. In some embodiments,the third etching process reduces a height of the second sidewallbarrier structure 1402 between fifty percent and ninety percent, therebyforming the first sidewall barrier structure 126. The height of thehardmask structure 1802 and/or the height of the second maskingstructure 1702 provides a means to control the third etching process1903, thereby allowing the first sidewall barrier structure 126 to beformed extending vertically the first distance D₁ from the upper surfaceof the first dielectric layer 1104 toward the upper surface of thesecond dielectric structure 118.

In some embodiments, the third etching process 1903 is a wet etchingprocess. In further embodiments, the third etching process 1903 is a wetetching process that utilizes hydrogen peroxide (H₂O₂) as an etchant. Insuch embodiments, the wet etching process comprises exposing the secondsidewall barrier structure 1402 to a second solution comprising H₂O₂.The second solution has a different chemical composition than the firstsolution. The second solution may have a concentration of about thirtypercent H₂O₂. It will be appreciated that the second solution maycomprise a different concentration of H₂O₂ (e.g., greater/less thanabout thirty percent H₂O₂). In further such embodiments, the secondsidewall barrier structure 1402 is exposed to the second solution for asecond time interval. In yet further such embodiments, the second timeinterval may be about thirty seconds. If the second time interval isabout thirty seconds, the first sidewall barrier structure 126 is formedextending vertically the first distance D₁ from the upper surface of thefirst dielectric layer 1104 toward the upper surface of the seconddielectric structure 118; if the second time interval is greater/lessthan about thirty seconds, the first sidewall barrier structure 126 isformed extending vertically a third distance that does not equal thefirst distance D₁ from the upper surface of the first dielectric layer1104 toward the upper surface of the second dielectric structure 118. Itwill be appreciated that the second time interval may be any timeinterval (e.g., greater/less than thirty seconds) that is sufficient toform the first sidewall barrier structure 126 extending vertically thefirst distance D₁ from the upper surface of the first dielectric layer1104 toward the upper surface of the second dielectric structure 118.

Also shown in FIGS. 19A-19B, a third masking structure 1904 is formeddirectly between the inner sidewalls of the hardmask structure 1802. Insome embodiments, the third masking structure 1904 is formed with anupper surface disposed below the upper surface of the hardmask structure1802. In further embodiments, the upper surface of the third maskingstructure 1904 is an uppermost surface of the third masking structure1904.

Also shown in FIGS. 19A-19B, a crevice 1906 is formed between the thirdmasking structure 1904 and the hardmask structure 1802. The crevice 1906is a void of material that is disposed between the third maskingstructure 1904 and the hardmask structure 1802. In some embodiments,sidewalls of the crevice 1906 are defined by outer sidewalls of thethird masking structure 1904 and the inner sidewalls of the hardmaskstructure 1802. In further embodiments, the crevice 1906 extends atleast partially from the upper surface of the third masking structure1904 to a lower surface of the third masking structure 1904. In otherembodiments, the crevice 1906 extends fully from the upper surface ofthe third masking structure 1904 to the lower surface of the thirdmasking structure 1904. In yet further embodiments, the crevice 1906laterally surrounds the third masking structure 1904.

In some embodiments, a process for forming the third masking structure1904 and the crevice 1906 comprises performing the third etching processon the second masking structure 1702. The third etching process 1903removes an upper portion of the second masking structure 1702 and anouter portion of the second masking structure 1702, thereby forming thethird masking structure 1904. Because the third etching process 1903removes the outer portions of the second masking structure 1702, thecrevice 1906 is formed between the third masking structure 1904 and thehardmask structure 1802.

Further, because the third etching process 1903 is performed with thehardmask structure 1802 and the second masking structure 1702 in placeover the first dielectric layer 1104, the crevice 1906 is formed betweenthe hardmask structure 1802 and the third masking structure 1904. If thehardmask structure 1802 was not in place, the crevice 1906 may be formedbetween the second masking structure 1702 and the first sidewall barrierstructure 126. If the crevice 1906 was between the second maskingstructure 1702 and the first sidewall barrier structure 126, a portionof the first dielectric layer 1104 may be unintentionally removed,thereby increasing fabrication costs without adding a benefit.

As shown in FIGS. 20A-20B, the third masking structure 1904 (see, e.g.,FIGS. 19A-19B) is removed. The third masking structure 1904 is removedfrom the hardmask structure 1802. In some embodiments, a process forremoving the third masking structure 1904 comprises performing a fourthetching process 2002 (e.g., wet/dry etching process) on the thirdmasking structure 1904. In further embodiments, the fourth etchingprocess 2002 is a dry etching process (e.g., reactive-ion etching). Inyet further embodiments, the fourth etching process 2002 may be a dryetching process that utilizes oxygen as a processing gas (and/oretchant) (e.g., oxygen plasma etching, oxygen plasma ashing, etc.).

As shown in FIGS. 21A-21B, the hardmask structure 1802 (see, e.g., FIGS.20A-20B) is removed. The hardmask structure 1802 is removed from thefirst sidewall barrier structure 126 and the first dielectric layer1104. In some embodiments, a process for removing the hardmask structure1802 comprises performing a fifth etching process 2102 (e.g., wet/dryetching process) on the hardmask structure 1802.

In some embodiments, the fifth etching process 2102 is a wet etchingprocess. In further embodiments, the fifth etching process 2102 is a wetetching process that utilizes HF as an etchant. In such embodiments, thewet etching process comprises exposing the third masking structure 1904to a third solution comprising HF. The third solution may have aconcentration of about one percent HF. It will be appreciated that thethird solution may have a different concentration of HF (e.g.,greater/less than about one percent HF). The third solution may have asame chemical composition as the first solution. In other embodiments,the third solution may have a different chemical composition (e.g.,different concentration of HF) as the first solution. In further suchembodiments, the third masking structure 1904 is exposed to the thirdsolution for a third time interval. In yet further such embodiments, thethird time interval is substantially the same as the first timeinterval. In other embodiments, the third time interval may be greaterthan (or less than) the first time interval. It will be appreciatedthat, in some embodiments, the third masking structure 1904 and thehardmask structure 1802 may be removed by a same etching process.

After the third masking structure 1904 and the hardmask structure 1802are removed, a fourth opening 2104 is disposed in the second dielectricstructure 118 and over the upper conductive pad 114 p. The fourthopening 2104 is defined by a first upper portion of the inner sidewallsof the second dielectric structure 118, the upper surface of the firstsidewall barrier structure 126, the inner sidewalls of the firstsidewall barrier structure 126, and a second central portion of theupper surface of the first dielectric layer 1104. The second centralportion of the upper surface of the first dielectric layer 1104 isdisposed directly between the inner sidewalls of the first sidewallbarrier structure 126. The fourth opening 2104 has a lower region and anupper region disposed over the lower region. In some embodiments, thelower region of the fourth opening 2104 is defined by the innersidewalls of the first sidewall barrier structure 126 and the secondcentral portion of the upper surface of the first dielectric layer 1104.In further embodiments, the upper region of the fourth opening 2104 isdefined by the first upper portion of the inner sidewalls of the seconddielectric structure 118 and the upper surface of the first sidewallbarrier structure 126. In further embodiments, an uppermost boundary ofthe upper region of the fourth opening 2104 is disposed at (or below)the upper surface of the second dielectric structure 118. In yet furtherembodies, an uppermost boundary of the lower region of the fourthopening 2104 is disposed at (or below) the upper surface of the firstsidewall barrier structure 126.

As shown in FIGS. 22A-22B, a first dielectric structure 116 is formedbetween the second dielectric structure 118 and the ILD structure 112.The first dielectric structure 116 is also formed between the firstsidewall barrier structure 126 and the upper conductive pad 114 p. Thefirst dielectric structure 116 is formed with inner sidewalls that arelaterally spaced apart. In some embodiments, the inner sidewalls of thefirst dielectric structure 116 are substantially aligned with the innersidewalls of the first sidewall barrier structure 126. In furtherembodiments, the inner sidewalls of the first dielectric structure 116are substantially vertical.

In some embodiments, a process for forming the first dielectricstructure 116 comprises performing an etching process (e.g., dry/wetetching process) on the first dielectric layer 1104 (see, e.g., FIGS.21A-21B). The process for forming the first dielectric structure 116removes a central region of the first dielectric layer 1104, therebyforming the first dielectric layer 1104. The central region of the firstdielectric layer 1104 is disposed at least partially between the innersidewalls of the first sidewall barrier structure 126. In furtherembodiments, during the etching process, the second dielectric structure118 and the first sidewall barrier structure 126 act as a maskingstructure so that the etching process removes the central region of thefirst dielectric layer 1104, thereby leaving masked portions of thefirst dielectric layer 1104 in place as the first dielectric structure116.

After the first dielectric structure 116 is formed, a fifth opening 2202is disposed in the first dielectric structure 116 and between the fourthopening 2104 and the upper conductive pad 114 p. The fifth opening 2202is defined by a third central portion of an upper surface of the upperconductive pad 114 p and the inner sidewalls of the first dielectricstructure 116. In some embodiments, an uppermost boundary of the fifthopening 2202 is disposed at (or below) an upper surface of the firstdielectric structure 116. In some embodiments, an outer perimeter of thefifth opening 2202 is disposed within an outer perimeter of the fourthopening 2104.

As shown in FIGS. 23A-23B, a lower bumping structure 122 is formed overILD structure 112 and the upper conductive pad 114 p. In someembodiments, the lower bumping structure 122 is formed on the upperconductive pad 114 p. The lower bumping structure 122 is formed betweenthe inner sidewalls of the first dielectric structure 116 and the innersidewalls of the first sidewall barrier structure 126. In someembodiments, the lower bumping structure 122 is formed with an uppersurface that is substantially co-planar with the upper surface of thefirst sidewall barrier structure 126. In other embodiments, the lowerbumping structure 122 is formed so that the upper surface of the lowerbumping structure 122 is disposed over (or below) the upper surface ofthe first sidewall barrier structure 126. In further embodiments, thelower bumping structure 122 is formed contacting the upper surface ofthe upper conductive pad 114 p, the inner sidewalls of the firstdielectric structure 116, and the inner sidewalls of the first sidewallbarrier structure 126. In further embodiments, the lower bumpingstructure 122 is formed contacting the inner sidewalls of the seconddielectric structure 118.

In some embodiments, a process for forming the lower bumping structure122 comprises depositing a first conductive material on the upperconductive pad 114 p, in the fifth opening 2202 (see, e.g., FIGS.22A-22B), and partially in the fourth opening 2104 (e.g., the lowerregion of the fourth opening 2104), thereby forming the lower bumpingstructure 122 over the upper conductive pad 114 p and verticallyextending toward the upper surface of the second dielectric structure118. In some embodiments, the first conductive material may be orcomprise, for example, Ni, a Ni alloy, some other suitable metal, or acombination of the foregoing. The first conductive material may bedeposited by, for example, CVD, PVD, ALD, sputtering, electrochemicalplating, electroless plating, some other deposition process, or acombination of the foregoing. In further embodiments, the firstconductive material is deposited by an electroplating process.

As shown in FIGS. 24A-24B, an upper bumping structure 124 is formed overthe lower bumping structure 122 and the first sidewall barrier structure126. In some embodiments, the upper bumping structure 124 is formed onthe lower bumping structure 122 and on the first sidewall barrierstructure 126. The upper bumping structure 124 is formed between theinner sidewalls of the second dielectric structure 118. The upperbumping structure 124 is formed with an upper surface that issubstantially co-planar (or disposed below) the upper surface of thesecond dielectric structure 118. In some embodiments, the upper bumpingstructure 124 is formed so that the upper surface of the upper bumpingstructure 124 does not extend above the upper surface of the seconddielectric structure 118. In further embodiments, the upper bumpingstructure 124 is formed contacting the upper surface of the lowerbumping structure 122 and the inner sidewalls of the second dielectricstructure 118. In further embodiments, the upper bumping structure 124is formed contacting the upper surface of the first sidewall barrierstructure 126. In yet further embodiments, the upper bumping structure124 is formed contacting the inner sidewalls of the first sidewallbarrier structure 126.

In some embodiments, a process for forming the upper bumping structure124 comprises depositing a second conductive material on the lowerbumping structure 122, on the first sidewall barrier structure 126, andpartially in the fourth opening 2104 (e.g., the upper region of thefourth opening 2104 (see, e.g., FIGS. 23A-23B)), thereby forming theupper bumping structure 124 over both the lower bumping structure 122and the first sidewall barrier structure 126 and vertically extendingtoward the upper surface of the second dielectric structure 118. Thesecond conductive material is different than the first conductivematerial. In some embodiments, the second conductive material may be orcomprise, for example, Au, Pt, some other suitable metal, or acombination of the foregoing. In further embodiments, the firstconductive material is Ni and the second conductive material is Au. Thesecond conductive material may be deposited by, for example, CVD, PVD,ALD, sputtering, electrochemical plating, electroless plating, someother deposition process, or a combination of the foregoing. In furtherembodiments, the second conductive material is deposited by anelectroplating process.

In some embodiments, after the upper bumping structure 124 is formed,formation of the bumping structure 120 is complete. The bumpingstructure 120 comprises the lower bumping structure 122 and the upperbumping structure 124. In further embodiments, after the upper bumpingstructure 124 is formed, formation of the IC 100 is complete.

FIG. 25 illustrates a flowchart 2500 of some embodiments of a method forforming some embodiments of the IC 100 of FIG. 1. While the flowchart2500 of FIG. 25 is illustrated and described herein as a series of actsor events, it will be appreciated that the illustrated ordering of suchacts or events is not to be interpreted in a limiting sense. Forexample, some acts may occur in different orders and/or concurrentlywith other acts or events apart from those illustrated and/or describedherein. Further, not all illustrated acts may be required to implementone or more aspects or embodiments of the description herein, and one ormore of the acts depicted herein may be carried out in one or moreseparate acts and/or phases.

At act 2502, a first dielectric structure is formed over a firstdielectric layer and over a workpiece, where the workpiece comprises anupper conductive pad, where the first dielectric layer is disposedbetween the first dielectric structure and the workpiece, and whereinner sidewalls of the first dielectric structure define sidewalls of anopening that is disposed in the first dielectric structure and over theupper conductive pad. FIGS. 11A-11B through FIGS. 12A-12B illustrate aseries of various cross-sectional views of some embodimentscorresponding to act 2502.

At act 2504, a first sidewall barrier structure is formed over the firstdielectric layer and along the sidewalls of the opening. FIGS. 13A-13Bthrough FIGS. 14A-14B illustrate a series of various cross-sectionalviews of some embodiments corresponding to act 2504.

At act 2506, a masking structure is formed over the first dielectriclayer and between the inner sidewalls of the first sidewall barrierstructure. FIGS. 15A-15B through FIGS. 17A-17B illustrate a series ofvarious cross-sectional views of some embodiments corresponding to act2506.

At act 2508, a hardmask structure is formed over the first dielectriclayer and between the inner sidewalls of the first sidewall barrierstructure, where the hardmask structure separates the masking structurefrom both the first sidewall barrier structure and the first dielectricstructure. FIGS. 15A-15B through FIGS. 18A-18B illustrate a series ofvarious cross-sectional views of some embodiments corresponding to act2508.

At act 2510, a second sidewall barrier structure is formed between theinner sidewalls of the first dielectric structure and over the firstdielectric layer by removing an upper portion of the first sidewallbarrier structure. FIGS. 19A-19B illustrate various cross-sectionalviews of some embodiments corresponding to act 2510.

At act 2512, a second dielectric structure is formed between theworkpiece and both the first dielectric structure and the secondsidewall barrier structure. FIGS. 20A-20B through FIGS. 22A-22Billustrate a series of various cross-sectional views of some embodimentscorresponding to act 2512.

At act 2514, a lower bumping structure is formed over the upperconductive pad, where the lower bumping structure is electricallycoupled to the upper conductive pad, and where the lower bumpingstructure extends vertically though the second dielectric structure andvertically along inner sidewalls of the second sidewall barrierstructure. FIGS. 23A-23B illustrate various cross-sectional views ofsome embodiments corresponding to act 2514.

At act 2516, an upper bumping structure is formed over the lower bumpingstructure, over the second sidewall barrier structure, and between theinner sidewalls of the first dielectric structure. FIGS. 24A-24Billustrate various cross-sectional views of some embodimentscorresponding to act 2516.

FIGS. 26A-26B through 28A-28B illustrate a series of various views ofsome embodiments of a method for forming a first singulated diecomprising some embodiments of the IC 100 of FIG. 1. Figures with asuffix of “A” (e.g., FIG. 26A) illustrate a series of layout views ofsome embodiments of the method for forming a first singulated diecomprising some embodiments of the IC 100 of FIG. 1. Figures with asuffix of “B” (e.g., FIG. 26B) illustrate a series of cross-sectionalviews of a corresponding figure having a suffix of “A” taken along lineB-B of the corresponding figure. For example, FIG. 26B illustrates across-sectional view of the IC 100 of FIG. 26A taken along line B-B ofFIG. 26A, FIG. 27B illustrates a cross-sectional view of the IC 100 ofFIG. 27A taken along line B-B of FIG. 27A, and so forth.

As shown in FIGS. 26A-26B, a plurality of ICs (not labeled for ease ofillustration) are disposed on a semiconductor wafer 2602. The pluralityof ICs are disposed on the semiconductor wafer 2602 in an array. The IC100 is one of the plurality of ICs. In some embodiments, each of the ICsof the plurality of ICs comprise a bumping structure (e.g., the bumpingstructure 120), which comprises a lower bumping structure (e.g., thelower bumping structure 122) and an upper bumping structure (e.g., theupper bumping structure 124), disposed at least partially in a seconddielectric structure (e.g., the second dielectric structure 118). Thesemiconductor wafer 2602 comprises any type of semiconductor body (e.g.,monocrystalline silicon/CMOS bulk, silicon-germanium (SiGe), silicon oninsulator (SOI), etc.). In some embodiments, the semiconductor wafer2602 is disk-shaped.

As shown in FIGS. 27A-27B, a carrier wafer 2702 is bonded to thesemiconductor wafer 2602. In some embodiments, the carrier wafer 2702 isdisk-shaped. The carrier wafer 2702 may be, for example, a polyimidewafer, semiconductor wafer, or the like. In some embodiments, a processfor bonding the carrier wafer 2702 to the semiconductor wafer 2602comprises bonding the carrier wafer 2702 to the second dielectricstructures (e.g., via a temporary bonding process) of the plurality ofICs and/or the upper bumping structures of the plurality of ICs. Becausethe ICs of the plurality of ICs comprise the bumping structures, theprocess of bonding the carrier wafer 2702 to the semiconductor wafer2602 (e.g., via bonding the carrier wafer 2702 to the second dielectricstructures of the plurality of ICs and/or the upper bumping structuresof the plurality of ICs) may be improved due to uppermost points of theupper bumping structures being disposed at or below uppermost points ofthe second dielectric structures, thereby improving yield (e.g., bypreventing damage to the ICs during bonding, preventing unintentionaldebonding of the carrier wafer, etc.).

As shown in FIGS. 28A-28B, with the carrier wafer 2702 bonded to thesemiconductor wafer 2602, a wafer dicing process is performed on thebonded together carrier wafer 2702 and semiconductor wafer 2602 (see,e.g., FIGS. 27A-27B) to singulate the ICs of the plurality of ICs fromthe bonded together carrier wafer 2702 and semiconductor wafer 2602,thereby forming a first plurality of singulated dies. The firstplurality of singulated dies comprise the plurality of ICs,respectively. For example, the IC 100 is singulated from the bondedtogether carrier wafer 2702 and semiconductor wafer 2602 to form a firstsingulated die 2802 comprising the IC 100. In some embodiments, thewafer dicing process comprises performing a series of cuts into thebonded together carrier wafer 2702 and semiconductor wafer 2602 to forma plurality of scribe lines 2804, each of which are disposed on a sideof the ICs of the plurality of ICs. Subsequently, a mechanical force isapplied to the bonded together carrier wafer 2702 and semiconductorwafer 2602 to singulate the ICs of the plurality of ICs, thereby formingthe first plurality of singulated dies. In further embodiments, the cutsmay be performed by, for example, mechanical sawing, laser cutting, orthe like.

In some embodiments, after the plurality of singulated dies are formed,each of the singulated dies of the plurality of singulated diescomprises a semiconductor substrate and a carrier substrate. Forexample, the first singulated die 2802 comprises the semiconductorsubstrate 102 and the carrier substrate 702 (see, e.g., FIG. 7A). Insome embodiments, the semiconductor substrate 102 is a portion of thesemiconductor wafer 2602 that has been singulated from the semiconductorwafer 2602 via the wafer dicing process. In further embodiments, thecarrier substrate 702 is a portion of the carrier wafer 2702 that hasbeen singulated from the carrier wafer 2702 via the wafer dicingprocess. The first singulated die 2802 may have a square-shaped (orrectangular-shaped) layout. The semiconductor substrate 102 may have asquare-shaped (or rectangular-shaped) layout. The carrier substrate 702may have a square-shaped (or rectangular-shaped) layout. In someembodiments, the layout of the semiconductor substrate 102 and thelayout of the carrier substrate 702 are substantially the same (e.g.,having an area and a layout shape that are substantially the same).After the first singulated die 2802 is formed, the carrier substrate 702may be removed (e.g., debonded) from the IC 100 via a subsequent removalprocess. It will be appreciated that, in some embodiments, the carrierwafer 2702 may be removed (e.g., debonded) before the wafer dicingprocess is performed. In such embodiments, after the plurality ofsingulated dies are formed, the singulated dies of the plurality ofsingulated dies do not comprise carrier substrates.

FIG. 29 illustrates a cross-sectional view of some embodiments of amethod for forming a display device 900 comprising the first singulateddie 2802 formed in FIGS. 26A-26B through 28A-28B.

As shown in FIG. 29, the first singulated die 2802 is bonded to a screenpanel 802 (see, e.g., FIG. 8). It will be appreciated that the firstsingulated die 2802 is not limited to comprising the embodiment of theIC 100 illustrated in FIGS. 26A-26B through 28A-28B, rather the firstsingulated die 2802 may comprise other embodiments of the IC 100 (see,e.g., FIGS. 1-6). In some embodiments, before the first singulated die2802 is bonded to the screen panel 802 the carrier substrate 702 isremoved from the first singulated die 2802 (e.g., via a suitabledebonding process, such as a laser debonding process). In someembodiments, the screen panel 802 comprises a transparent bonding layer804 and a transparent cover structure 806. In further embodiments, oneor more second conductive features 906 (e.g., conductive lines) aredisposed in the transparent cover structure 806. Further, a secondplurality of singulated dies 2902 a-b are bonded to the screen panel802. The second plurality of singulated dies 2902 a-b comprise theplurality of light-emitting ICs 902 a-c, respectively. For example, asecond singulated die 2902 a comprises a first light-emitting IC 902 a,and a third singulated die 2902 b comprises a second light-emitting IC902 b. It will be appreciated that, in other embodiments, one or more ofthe plurality of light-emitting ICs 902 a-c may be disposed on one ofthe second plurality of singulated dies.

In some embodiments, a process for bonding the first singulated die 2802and the second plurality of singulated dies 2902 a-b to the screen panel802 comprises transferring the first singulated die 2802 and the secondplurality of singulated dies 2902 a-b onto the screen panel 802 via atransferring process, thereby bonding the first singulated die 2802 andthe second plurality of singulated dies 2902 a-b to the screen panel802. For example, the transferring process comprises picking up thefirst singulated die 2802, the second singulated die 2902, and the thirdsingulated die 2902 b from a first location and transferring the firstsingulated die 2802, the second singulated die 2902, and the thirdsingulated die 2902 b onto the transparent bonding layer 804, therebybonding the first singulated die 2802, the second singulated die 2902 a,and the third singulated die 2902 b to the screen panel 802. Because thefirst singulated die 2802, the second singulated die 2902 a, and thethird singulated die 2902 b are bonded to the screen panel 802, the IC100, the first light-emitting IC 902 a, and the second light-emitting IC902 b are also bonded to the screen panel 802.

In some embodiments, the transferring process may be, for example, apick-and-place transfer process, an elastomer stamp (or roll) process,an electrostatic stamp process, some other suitable transferringprocess, or a combination of the foregoing. It will be appreciated thatthe first singulated die 2802, the second singulated die 2902 a, and thethird singulated die 2902 b may be bonded to the screen panel 802 viamultiple transferring processes. The first singulated die 2802, thesecond singulated die 2902 a, and the third singulated die 2902 b arebonded to the screen panel 802 in a predefined pattern (e.g., a 5×5array) so that the one or more second conductive features 906electrically coupled the light-emitting ICs 902 a-c to the IC 100.

Because the IC 100 comprises the bumping structure 120, an improved bondinterface between the first singulated die 2802 and the screen panel 802exists. For example, because the upper bumping structure 124 does nothave the “fence” structure 502 (see, e.g., FIG. 5) that extends over theupper surface of the second dielectric structure 118, the bond interfacebetween the first singulated die 2802 and the screen panel 802 isimproved. The improved bond interface may improve robustness of thedisplay device 900 (e.g., resistance of the screen panel 802 tocrack/shatter/delaminate in response to a given mechanical force beingapplied on the transparent cover structure 806) and/or yield of thedisplay device 900. For example, the improved bond interface may improvethe robustness of the display device 900 and/or yield of the displaydevice 900 due to the bumping structure 120 reducing high-stress pointsthat may cause cracking/shattering/delamination of the screen panel 802during fabrication (or during consumer use) of the display device 900(e.g., due to the reduction in high-stress points increasing an amountof mechanical force that can be applied on the transparent coverstructure 806 before cracking/shattering/delamination of the screenpanel 802).

FIG. 30 illustrates a flowchart 3000 of some embodiments of a methodfor: (1) forming a singulated die comprising some embodiments of the IC100 of FIG. 1; and (2) forming a display device comprising thesingulated die. While the flowchart 3000 of FIG. 30 is illustrated anddescribed herein as a series of acts or events, it will be appreciatedthat the illustrated ordering of such acts or events is not to beinterpreted in a limiting sense. For example, some acts may occur indifferent orders and/or concurrently with other acts or events apartfrom those illustrated and/or described herein. Further, not allillustrated acts may be required to implement one or more aspects orembodiments of the description herein, and one or more of the actsdepicted herein may be carried out in one or more separate acts and/orphases.

At act 3002, a semiconductor wafer is received comprising a plurality ofintegrated circuits (ICs) disposed on the semiconductor wafer. FIGS.26A-26B illustrate various views of some embodiments corresponding toact 3002.

At act 3004, a carrier wafer is bonded to the semiconductor wafer. FIGS.27A-27B illustrate various views of some embodiments corresponding toact 3004.

At act 3006, a first singulated die comprising a first IC of theplurality of ICs is formed by singulating the first IC of the pluralityof ICs from the bonded together semiconductor wafer and carrier wafer.FIGS. 28A-28B illustrate various views of some embodiments correspondingto act 3006. In some embodiments, the method 3007 for forming asingulated die comprising some embodiments of the IC of FIG. 1 comprisesact 3002, act 3004, and act 3006.

At act 3008, the first singulated die is bonded to a screen panel. FIG.29 illustrates a cross-sectional view of some embodiments correspondingto act 3008.

At act 3010, a second singulated die comprising a light-emitting IC isbonded to the screen panel. FIG. 29 illustrates a cross-sectional viewof some embodiments corresponding to act 3010. In some embodiments, themethod 3011 for forming a display device comprising the singulated diecomprises act 3008 and act 3010.

In some embodiments, the present application provides a method forforming an integrated circuit (IC). The method comprises receiving aworkpiece comprising an interconnect structure embedded in an interlayerdielectric (ILD) structure and comprising a first dielectric layerdisposed over the ILD structure and the interconnect structure. A firstdielectric structure is formed over the workpiece. A sidewall barrierstructure is formed over the first dielectric layer and along innersidewalls of the first dielectric structure. A hardmask structure isformed over the first dielectric layer and along inner sidewalls of thesidewall barrier structure, wherein a height of the hardmask structureis less than a height of the first dielectric structure. After thehardmask structure is formed, an upper portion of the sidewall barrierstructure is removed so that a height of the sidewall barrier structureis less than or equal to the height of the hardmask structure. A portionof the first dielectric layer that is disposed between the innersidewalls of the sidewall barrier structure is removed to form a seconddielectric structure. A lower bumping structure is formed over the ILDstructure and extending vertically along inner sidewalls of the seconddielectric structure and along the inner sidewalls of the sidewallbarrier structure. An upper bumping structure is formed over both thelower bumping structure and the sidewall barrier structure.

In some embodiments, the present application provides an integratedcircuit (IC). The IC comprises an interlayer dielectric (ILD) structuredisposed over a semiconductor substrate, wherein an interconnectstructure is embedded in the ILD structure. A first dielectric structureis disposed over the ILD structure and the interconnect structure,wherein a conductive pad of the interconnect structure is at leastpartially disposed between first inner sidewalls of the first dielectricstructure. A second dielectric structure is disposed over the firstdielectric structure, wherein the first inner sidewalls are disposedbetween second inner sidewalls of the second dielectric structure. Asidewall barrier structure is disposed over the first dielectricstructure and extends vertically along the second inner sidewalls. Alower bumping structure is disposed over the conductive pad and betweenthe second inner sidewalls, wherein the lower bumping structure extendsvertically along the first inner sidewalls and along third innersidewalls of the sidewall barrier structure. An upper bumping structureis disposed over both the lower bumping structure and the sidewallbarrier structure, wherein the upper bumping structure extendsvertically along the second inner sidewalls, and wherein an uppermostpoint of the upper bumping structure is disposed at or below anuppermost point of the second dielectric structure.

In some embodiments, the present application provides a method. Themethod comprises receiving a semiconductor wafer having a plurality ofintegrated circuits (ICs) disposed on the semiconductor wafer, wherein:a first IC of the plurality of ICs comprises an interlayer dielectric(ILD) structure, a dielectric structure disposed over the ILD structure,and a bumping structure disposed over the ILD structure and betweeninner sidewalls of the dielectric structure; the bumping structurecomprises a lower bumping structure and an upper bumping structure; asidewall barrier structure is disposed along outer sidewalls of thelower bumping structure and at least partially separates the lowerbumping structure from the inner sidewalls of the dielectric structure;an uppermost surface of the sidewall barrier structure is substantiallyco-planar with an uppermost surface of the lower bumping structure; andthe upper bumping structure is disposed over both the lower bumpingstructure and the sidewall barrier structure. A carrier wafer is bondedto the semiconductor wafer by bonding the carrier wafer to thedielectric structure or the bumping structure. A first singulated diecomprising the first IC is formed by singulating the first IC from thebonded together semiconductor wafer and carrier wafer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method for forming an integrated circuit (IC),the method comprising: receiving a workpiece comprising an interconnectstructure embedded in an interlayer dielectric (ILD) structure andcomprising a first dielectric layer disposed over the ILD structure andthe interconnect structure; forming a first dielectric structure overthe workpiece; forming a sidewall barrier structure over the firstdielectric layer and along inner sidewalls of the first dielectricstructure; forming a hardmask structure over the first dielectric layerand along inner sidewalls of the sidewall barrier structure, wherein aheight of the hardmask structure is less than a height of the firstdielectric structure; after the hardmask structure is formed, removingan upper portion of the sidewall barrier structure so that a height ofthe sidewall barrier structure is less than or equal to the height ofthe hardmask structure; removing a portion of the first dielectric layerdisposed between the inner sidewalls of the sidewall barrier structureto form a second dielectric structure; forming a lower bumping structureover the ILD structure and extending vertically along inner sidewalls ofthe second dielectric structure and along the inner sidewalls of thesidewall barrier structure; and forming an upper bumping structure overboth the lower bumping structure and the sidewall barrier structure. 2.The method of claim 1, wherein: removing the portion of the firstdielectric layer exposes an upper conductive pad of the interconnectstructure; and the lower bumping structure is formed extendingvertically from the upper conductive pad.
 3. The method of claim 2,further comprising: after the upper portion of the sidewall barrierstructure is removed and before the portion of the first dielectriclayer is removed, removing the hardmask structure.
 4. The method ofclaim 3, wherein forming the hardmask structure comprises: forming ahardmask layer lining an upper surface of the first dielectricstructure, the inner sidewalls of the sidewall barrier structure, and anupper surface of the portion of the first dielectric layer; forming amasking structure over the hardmask layer; removing an upper portion ofthe masking structure so that a lower portion of the masking structureremains over the hardmask layer, wherein an upper surface of the lowerportion of the masking structure is disposed below both an uppermostsurface of the first dielectric structure and an uppermost surface ofthe hardmask layer; and removing an upper portion of the hardmask layer,thereby forming the hardmask structure.
 5. The method of claim 4,wherein: the upper portion of the sidewall barrier structure is removedvia a first etching process; and the first etching process removes anouter region of the lower portion of the masking structure, therebyforming a crevice between the lower portion of the masking structure andthe hardmask layer.
 6. The method of claim 5, wherein: after the upperportion of the sidewall barrier structure is removed and before thelower bumping structure is formed, removing both the lower portion ofthe masking structure and the hardmask structure; and the upper portionof the hardmask layer is removed via a second etching process; the firstetching process comprises exposing the upper portion of the sidewallbarrier structure, the lower portion of the masking structure, and thehardmask structure to a first etchant; and the second etching processcomprises exposing the hardmask layer and the lower portion of themasking structure to a second etchant that is different than the firstetchant.
 7. A method, the method comprising: receiving a semiconductorwafer having a plurality of integrated circuits (ICs) disposed on thesemiconductor wafer, wherein: a first IC of the plurality of ICscomprises an interlayer dielectric (ILD) structure, a dielectricstructure disposed over the ILD structure, and a bumping structuredisposed over the ILD structure and between inner sidewalls of thedielectric structure; the bumping structure comprises a lower bumpingstructure and an upper bumping structure; a sidewall barrier structureis disposed along outer sidewalls of the lower bumping structure and atleast partially separates the lower bumping structure from the innersidewalls of the dielectric structure; an uppermost surface of thesidewall barrier structure is substantially co-planar with an uppermostsurface of the lower bumping structure; and the upper bumping structureis disposed over both the lower bumping structure and the sidewallbarrier structure; bonding a carrier wafer to the semiconductor wafer,wherein the carrier wafer is bonded to the dielectric structure or thebumping structure; and forming a first singulated die comprising thefirst IC by singulating the first IC from the bonded togethersemiconductor wafer and carrier wafer.
 8. The method of claim 7,wherein: after the first singulated die is formed, the first singulateddie comprises a semiconductor substrate disposed below the ILD structureand a carrier substrate disposed over both the dielectric structure andthe bumping structure.
 9. The method of claim 8, further comprising:after the first singulated die is formed, removing the carrier substratefrom the first singulated die; bonding the first singulated die to ascreen panel after the carrier substrate is removed from the firstsingulated die; and bonding a second singulated die comprising alight-emitting IC to the screen panel, wherein the light-emitting ICcomprises one or more light-emitting structures.
 10. A method, themethod comprising: receiving a workpiece comprising an interconnectstructure embedded in an interlayer dielectric (ILD) structure andcomprising a first dielectric layer disposed over the ILD structure andthe interconnect structure, wherein the interconnect structure comprisesa conductive pad; forming a second dielectric layer over the firstdielectric layer; forming a first opening in the second dielectric layerand at least partially between sidewalls of the conductive pad; forminga sidewall barrier structure over the first dielectric layer and alongsidewalls of the first opening, wherein a portion of the firstdielectric layer is disposed between inner sidewalls of the sidewallbarrier structure; forming a hardmask layer lining the second dielectriclayer, the sidewall barrier structure, and the portion of the firstdielectric layer; forming a masking structure lining the hardmask layerand filling the first opening; removing an upper portion of the maskingstructure, such that a lower portion of the masking structure remains inthe first opening and has an uppermost surface disposed between anuppermost surface of the second dielectric layer and an uppermostsurface of the first dielectric layer; removing an upper portion of thehardmask layer, such that a lower portion of the hardmask layer remainsin the first opening and has an uppermost surface that is substantiallyaligned with the uppermost surface of the lower portion of the maskingstructure; and removing an upper portion of the sidewall barrierstructure, such that a lower portion of the sidewall barrier structureremains in the first opening and has an uppermost surface disposedvertically between the uppermost surface of the lower portion of thehardmask layer and the uppermost surface of the first dielectric layer.11. The method of claim 10, further comprising: after the upper portionof the sidewall barrier structure is removed, removing the lower portionof the hardmask layer; and after the upper portion of the sidewallbarrier structure is removed, removing the lower portion of the maskingstructure.
 12. The method of claim 11, wherein removing the upperportion of the hardmask layer comprises: performing a first etch,wherein the first etch comprises exposing the upper portion of thehardmask layer to diluted hydrofluoric acid.
 13. The method of claim 12,wherein removing the upper portion of the sidewall barrier structurecomprises: performing a second etch after the first etch, wherein thesecond etch comprises exposing the upper portion of the sidewall barrierstructure to hydrogen peroxide.
 14. The method of claim 13, whereinremoving the lower portion of the hardmask layer comprises: performing athird etch after the second etch, wherein the third etch comprisesexposing the lower portion of the hardmask layer to diluted hydrofluoricacid.
 15. The method of claim 11, further comprising: after the lowerportion of the masking structure and the lower portion of the hardmasklayer are removed, forming a second opening in the first dielectriclayer to expose the conductive pad, wherein forming the second openingcomprises removing the portion of the first dielectric layer; forming alower bumping structure on the conductive pad and at least partiallyalong inner sidewalls of the lower portion of the sidewall barrierstructure; and forming an upper bumping structure covering the lowerbumping structure and the lower portion of the sidewall barrierstructure.
 16. The method of claim 15, wherein the upper bumpingstructure is formed at least partially on the uppermost surface of thelower portion of the sidewall barrier structure.
 17. The method of claim16, wherein the upper bumping structure is formed at least partiallyalong the inner sidewalls of the lower portion of the sidewall barrierstructure.
 18. The method of claim 15, wherein the lower bumpingstructure is formed at least partially on the uppermost surface of thelower portion of the sidewall barrier structure.
 19. The method of claim15, wherein: the sidewall barrier structure is titanium nitride; thelower bumping structure is nickel; and the upper bumping structure isgold.
 20. The method of claim 15, wherein the inner sidewalls of thelower portion of the sidewall barrier structure are arced.